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- Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors doi link

Auteur(s): Kadykov A., Teppe F., Consejo C., Viti L., Vitiello M. S., Krishtopenko S., Ruffenach S., Morozov S. V., Marcinkiewicz M., Desrat W., Diakonova N., Knap W., Gavrilenko V. I., Mikhailov N. N., Dvoretsky S. a.

(Article) Publié: Applied Physics Letters, vol. 107 p.152101 (2015)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-01237406_v1
DOI: 10.1063/1.4932943
WoS: WOS:000363424000019
Exporter : BibTex | endNote
11 Citations
Résumé:

We report on terahertz photoconductivity under magnetic field up to 16 T of field effect transistor based on HgTe quantum well (QW) with an inverted band structure. We observe pronounced cyclotron resonance and Shubnikov-de Haas-like oscillations, indicating a high mobility electron gas in the transistor channel. We discover that nonlinearity of the transistor channel allows for observation of characteristic features in photoconductivity at critical magnetic field corresponding to the phase transition between topological quantum spin Hall and trivial quantum Hall states in HgTe QW. Our results pave the way towards terahertz topological field effect transistors.