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- Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission doi link

Auteur(s): Lekhal K., Damilano B., Ngo H. T., Rosales D., de Mierry P., Hussain S., Vennegues P., Gil B.(Corresp.)

(Article) Publié: Applied Physics Letters, vol. 106 p.142101 (2015)
Texte intégral en Openaccess : openaccess


Ref HAL: hal-01238729_v1
DOI: 10.1063/1.4917222
WoS: WOS:000352820700011
Exporter : BibTex | endNote
34 Citations
Résumé:

XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission