Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission Auteur(s): Lekhal K., Damilano B., Ngo H. T., Rosales D., de Mierry P., Hussain S., Vennegues P., Gil B. (Article) Publié: Applied Physics Letters, vol. 106 p.142101 (2015) Texte intégral en Openaccess : Ref HAL: hal-01238729_v1 DOI: 10.1063/1.4917222 WoS: WOS:000352820700011 Exporter : BibTex | endNote 34 Citations Résumé: XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission |