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- Terahertz excitations in HgTe-based field effect transistors doi link

Auteur(s): Kadykov A., Consejo C., Teppe F., Desrat W., Viti L., Vitiello M. S., Coquillat D., Ruffenach S., Morozov S., Krishtopenko S., Marcinkiewicz M., Diakonova N., Knap W., Gavrilenko V., Michailov N. n., Dvoretskii S. A.

Conference: 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19) (Salamanca, ES, 2015)

Texte intégral en Openaccess : openaccess


Ref HAL: hal-01249955_v1
DOI: 10.1088/1742-6596/647/1/012009
WoS: WOS:000366236800009
Exporter : BibTex | endNote
Résumé:

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor. Photoconductivity measurements allow for the observation of cyclotron resonance and Shubnikov-de-Haas-like oscillations. However, an unexpected peak was observed at the critical magnetic field value for which zero mode Landau Levels are crossing. Therefore, this specific feature of TeraHertz photoconductivity spectra can tentatively attributed to this magnetic field driven topological phase transition.