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- Characterization of Integrated Antenna-Coupled Plasma-Wave Detectors With Wide Bandwidth Amplification in 130nm CMOS doi link

Auteur(s): Nahar Shamsun, Blink Stephane, Penarier Annick, Coquillat D., Knap W., Hella Mona m.

Conference: 2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) (Phoenix, AZ, US, 2015)
Actes de conférence: IEEE MTT-S International Microwave Symposium, vol. p.1 (2015)


Ref HAL: hal-01293240_v1
DOI: 10.1109/MWSYM.2015.7166950
WoS: WOS:000370722900247
Exporter : BibTex | endNote
Résumé:

A fully integrated 0.3 THz antenna-coupled plasma-wave detector with 10 GHz (measured) bandwidth is presented. Fabricated in 130nm CMOS technology, the chip is formed of an E-shaped patch antenna, plasmonic based Field Effect Transistor (FET) detector and a wide bandwidth amplifier employing inductive shunt peaking. The open drain mode of operation of the detector achieves an absolute responsivity of 10 V/W with a minimum signal to noise ratio (SNR) of 40 dB over the entire bandwidth. With a drain current of 0.24 mA, the responsivity increases by 10X with a decrease in bandwidth to 3 GHz. The detector is also characterized without the on chip amplifier for imaging applications and shows a measured absolute responsivity of 150 V/W for a drain current of 5 μA at 0.3 THz.