|InP Double Heterojunction Bipolar Transistor for detection above 1 THz |
Conference: 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) (Hong Kong, CN, 2015)
Ref HAL: hal-01336484_v1
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We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have gain and can still rectify THz current and voltage.