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- Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction. doi link

Auteur(s): Coquillat D., Marczewski Jacek, Kopyt Pawel, Diakonova N., Giffard Benoit, Knap W.

(Article) Publié: Optics Express, vol. 24 p.272-281 (2016)


Ref HAL: hal-01280198_v1
PMID 26832258
DOI: 10.1364/OE.24.000272
WoS: WOS:000368004800027
Exporter : BibTex | endNote
29 Citations
Résumé:

Phenomena of the radiation coupling to the field effect transistors based terahertz (THz) detectors are studied. We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, is coupled to an antenna substrate leading to responsivity losses and/or cross-talk effects in the field effect based THz detector arrays. Experimental and theoretical investigations of the responsivity versus substrate thickness are performed. They clearly show how to minimize the losses by the detector/ array substrate thinning. In conclusion simple quantitative rules of losses minimization by choosing a proper substrate thickness of field effect transistor THz detectors are presented for common materials (Si, GaAs, InP, GaN) used in semiconductor technologies.