- Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors doi link

Auteur(s): Kadykov A., Consejo C., Marcinkiewicz M., Viti L., Vitiello M. S., Krishtopenko S., Ruffenach S., Morozov S. V., Desrat W., Diakonova N., Knap W., Gavrilenko V. I., Mikhailov N. N., Dvoretsky S. a., Teppe F.

Conference: 17th International Conference on II-VI Compounds (Paris, FR, 2016)
Actes de conférence: Physica Status Solidi C-Current Topics in Solid State Physics, vol. 13 p.534-537 (2016)
Texte intégral en Openaccess : istex

Ref HAL: hal-01417831_v1
DOI: 10.1002/pssc.201510264
WoS: WOS:000387954400031
Exporter : BibTex | endNote
1 Citation

We have found the possibility to probe the magnetic field-driven topological phase transition in HgTe-based transistors by measuring their Terahertz photoconductivity response. At the critical magnetic field to which zero-mode Landau levels cross, we have observed a pronounced photoconductivity peak independent on incident frequency and carrier concentration. Our results pave the way towards terahertz topological field effect transistors.