|Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors |
Auteur(s): Kadykov A., Consejo C., Marcinkiewicz M., Viti L., Vitiello M. S., Krishtopenko S., Ruffenach S., Morozov S. V., Desrat W., Diakonova N., Knap W., Gavrilenko V. I., Mikhailov N. N., Dvoretsky S. a., Teppe F.
Conference: 17th International Conference on II-VI Compounds (Paris, FR, 2016)
Ref HAL: hal-01417831_v1
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We have found the possibility to probe the magnetic field-driven topological phase transition in HgTe-based transistors by measuring their Terahertz photoconductivity response. At the critical magnetic field to which zero-mode Landau levels cross, we have observed a pronounced photoconductivity peak independent on incident frequency and carrier concentration. Our results pave the way towards terahertz topological field effect transistors.