Terahertz Imaging by Field Effect Transistors Auteur(s): Knap W., But D., Coquillat D., Diakonova N., Teppe F., Sypek M., Suszek J., Cywinski G., Szkudlarek K., Yahniuk I., Yatsunenko S.
Conference: 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON) (Cracovie, PL, 2016-04-26) Ref HAL: hal-01436049_v1 WoS: WOS:000390422000107 Exporter : BibTex | endNote Résumé: An overview of main results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. As a conclusion, we will show one of the first real world application of the FET THz detectors: a demonstrator of the imager developed for fast postal security. |