Auteur(s): Diakonova N., Coquillat D., But D., Teppe F., Knap W., Faltermeier P., Olbrich P., Ganichev S. D., Szkudlarek K., Cywinski G.
Conference: 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON) (Cracovie, PL, 2016-04-26)
Ref HAL: hal-01436847_v1
WoS: WOS:000390422000183
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Résumé:
We report on the photoresponse of AlGaN/GaN HEMT to THz radiation of low and high intensity. We show that the response vs. gate bias dependence can be described by the theory of Dyakonov-Shur in the whole range of radiation intensity. Unusual behavior of the photoresponse vs. intensity was observed under laser irradiation: a quadratic increase of the response followed by saturation. We speculate that this phenomenon can be explained by hot electrons capture by traps in AlGaN or buffer layers.