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- Tuning s-SWNT@PFO networks for optoelectronics hal link

Auteur(s): Gaufrès Étienne, Gagnon P., Alvarez L., Paillet M., Michel T., Zahab A. A., Martel R., Izard N.(Corresp.)

(Affiches/Poster) NT16 - The Seventeenth International Conference on the Science and Application of Nanotube (Vienna, AT), 2016-08-07


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Résumé:

The rise of efficient extraction techniques triggered a renewal of interest in semiconducting carbon nanotube (s-SWNT) research. It represents a great interest for optoelectronics, with outstanding properties in field-effect transistor, and s-SWNT ability to efficiently emit light in the near-IR range. In particular, the hybrid system polyfluorene (PFO) wrapped s‑SWNT (s-SWNT@PFO) display strong photoluminescence, and could be coupled with photonic devices such as microring resonators to control photoluminescence linewidth and enhance photoluminescence intensity.The main challenge for using s-SWNT@PFO in optoelectronics lies in the difficulty to establish good electrical contact with a PFO embedded carbon nanotube, and existing studies only focused on optical pumping of carbon nanotube networks, without addressing issues of electrical driving.We propose to investigate these issues using suspended s-SWNT@PFO networks. The network formation process allow to control nanotube density, while the amount of remaining metallic nanotube in the network could be adjusted at the extraction phase. A selective annealing process under low pressure is used to tune PFO wrapping around the nanotubes. The resulting s-SWNT@PFO networks are then probed by AFM, Raman spectroscopy, absorption, photoluminescence and electrical experiments.