Auteur(s): Contreras S., Konczewicz L., Kwasnicki P., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Kayambaki Maria, Juillaguet S., Zekentes Konstantinos
Conference: 16th International Conference on Silicon Carbide and Related Materials (Catane, IT, 2015-10-05)
Actes de conférence: Material Sciences Forum, vol. 858 p.249 - 252 (2016)
Ref HAL: hal-01936580_v1
DOI: 10.4028/www.scientific.net/MSF.858.249
Exporter : BibTex | endNote
Résumé:
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC