- HgCdTe-based heterostructures for terahertz photonics doi link

Auteur(s): Ruffenach S., Kadykov A., Rumyantsev V. V., Torres Jeremie, Coquillat D., But D., Krishtopenko S., Consejo C., Knap W., Winnerl S., Helm M., Fadeev M. a., Mikhailov N. N., Dvoretskii S. A., Gavrilenko V. I., Morozov S. V., Teppe F.(Corresp.)

(Article) Publié: Apl Materials, vol. 5 p.035503 (2017)
Texte intégral en Openaccess : openaccess

Ref HAL: hal-01523131_v1
DOI: 10.1063/1.4977781
WoS: WOS:000398951000005
Exporter : BibTex | endNote
21 Citations

Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5–15 THz frequency domain.