- Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells doi link

Auteur(s): Krishtopenko S., Ikonnikov A. V., Maremyanin K. V., Bovkun L. s., Spirin K. E., Kadykov A., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B. r., Putyato M. a., Emelyanov E. a., Preobrazhenskii V. v., Gavrilenko V. I.

(Article) Publié: -Fizika I Tekhnika Poluprovodnicov / Semiconductors, vol. 51 p.38-42 (2017)

Ref HAL: hal-01523220_v1
DOI: 10.1134/S1063782617010109
WoS: WOS:000394272300008
Exporter : BibTex | endNote
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The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.