Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector Auteur(s): Diakonova N., Coquillat D., But D., Consejo C., Teppe F., Knap W., Varani L., Blin S., Nodjiadjim V., Konczykowska A., Riet M.
Conference: 2017 International Conference on Noise and Fluctuations (ICNF) (Vilnius, LT, 2017-06-20) Ref HAL: hal-01818746_v1 DOI: 10.1109/ICNF.2017.7986010 Exporter : BibTex | endNote Résumé: —We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10-10 W/Hz 1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power. |