|Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector |
Conference: 2017 International Conference on Noise and Fluctuations (ICNF) (Vilnius, LT, 2017-06-20)
Ref HAL: hal-01818746_v1
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—We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10-10 W/Hz 1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power.