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- High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography doi link

Auteur(s): Coquillat D.(Corresp.), Nodjiadjim Virginie, Duhant Alexandre, Triki M., Strauss Olivier, Konczykowska Agnieszka, Riet Muriel, Diakonova N., Knap W.

Conference: IRMMW-THz: Infrared, Millimeter, and Terahertz Waves (Cancun, MX, 2017-08-27)
Actes de conférence: 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, vol. p. (2017)


Ref HAL: hal-01920621_v1
DOI: 10.1109/IRMMW-THz.2017.8067253
Exporter : BibTex | endNote
Résumé:

We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.