|High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography |
Conference: IRMMW-THz: Infrared, Millimeter, and Terahertz Waves (Cancun, MX, 2017-08-27)
Ref HAL: hal-01920621_v1
Exporter : BibTex | endNote
We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.