- Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well doi link

Auteur(s): Krishtopenko S., Ruffenach S., Gonzalez-Posada F., Boissier G., Marcinkiewicz M., Fadeev M. a., Kadykov A., Rumyantsev V. V., Morozov S. V., Gavrilenko V. I., Consejo C., Desrat W., Jouault B., Knap W., Tournié Eric, Teppe F.(Corresp.)

(Article) Publié: -Physical Review B Condensed Matter And Materials Physics (1998-2015), vol. 97 p.245419 (2018)
Texte intégral en Openaccess : fichier pdf

Ref HAL: hal-01862289_v1
DOI: 10.1103/PhysRevB.97.245419
WoS: WOS:000436036700007
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We report on temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical transitions, measured up to 16 T at different temperatures by Landau-level magnetospectroscopy, demonstrate the inverted-band structure of the QW. The terahertz photoluminescence at different temperatures allows us to directly extract the optical gap in the vicinity of the Γ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers.