Photoluminescence of Mg−doped GaN and AlxGa1−xN (x< 0.2) grown by molecular beam epitaxy Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S., Konczewicz L. (Affiches/Poster) International Conference on the physics semiconductors (Montpellier, FR), 2018-07-30 Résumé: Photoluminescence of Mg−doped GaN and AlxGa1−xN (x< 0.2) grown by molecular beam epitaxy |