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- Photoluminescence of Mg−doped GaN and AlxGa1−xN (x< 0.2) grown by molecular beam epitaxy

Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S.(Corresp.), Konczewicz L.(Corresp.)

(Affiches/Poster) International Conference on the physics semiconductors (Montpellier, FR), 2018-07-30


Résumé:

Photoluminescence of Mg−doped GaN and AlxGa1−xN (x< 0.2) grown by molecular beam epitaxy