Auteur(s): Wang T., Landois P., Bayle M., Huntzinger J.-R., De cecco Alessandro, Courtois Hervé, Winkelmann Clemens, Paillet M., Jouault B., Contreras S.
(Affiches/Poster) International Conference on the physics semiconductors (Montpellier, FR), 2018-07-30
Résumé:
Structural and electronic properties of epitaxial graphene grown on SiC (0001) at low argon pressure