Ref HAL: hal-02302063_v1
DOI: 10.1016/j.diamond.2019.04.022
WoS: WOS:000474324600011
Exporter : BibTex | endNote
3 Citations
Résumé:

Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is improved when the CVD growth temperature is decreased, leading to $79\%$ preferential orientation at 800°C, as compared to only 47.5% at 1000°C. This effect is then combined with temperature-dependent incorporation of NV defects during the CVD growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that growth temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.