High-pressure, high temperature insertion of bismuth in the siliceous zeolite silicalite-1 Auteur(s): Zhao Yixuan, Clement S., Veremeienko Vasyl, Toulemonde Pierre, Hansen Thomas, van Der Lee Arie, Alonso Bruno, Rouquette Jérôme, Hermet P., Viennois Romain, Haines Julien (Article) Publié: Solid State Sciences, vol. 97 p.106001 (2019) Texte intégral en Openaccess : Ref HAL: hal-02305569_v1 DOI: 10.1016/j.solidstatesciences.2019.106001 WoS: 000504924000014 Exporter : BibTex | endNote 1 Citation Résumé: A silicalite-1/bismuth composite was synthesized by insertion of liquid bismuth in the 5.5 Å diameter pores of the zeolite under high-pressure, high-temperature conditions. The insertion of bismuth stabilizes the structure with respect to pressure-induced amorphization. Transmission electron microscopy indicated the presence of chains of atoms, which correspond to the 5.5 Å diameter of the host silicalite-1 structure. Neutron powder diffraction also confirmed the insertion of Bi in the pores of silicalite-1. Density functional theory calculations indicate that the insertion of bismuth results in formation of chains with short and long Bi-Bi distances in the pores of the host silicalite-1 linked to the framework by van der Waal's interactions. The material is predicted to be a semiconductor with a band gap of 0.4 eV. |