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- Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) doi link

Auteur(s): Ayari Taha, Sundaram Suresh, Bishop Chris, Mballo Adama, Vuong P., Halfaya Yacine, Karrakchou Soufiane, Gautier Simon, Voss Paul, Salvestrini Jean-Paul, Ougazzaden Abdallah

(Article) Publié: Advanced Materials Technologies, vol. 4 p.1970057 (2019)
Texte intégral en Openaccess : openaccess


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DOI: 10.1002/admt.201970057
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Résumé:

In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.