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- Single crystal growth of monoisotopic hexagonal boron nitride from a Fe-Cr flux doi link

Auteur(s): Li Jiahan, Elias C., Ye Gaihua, Evans Dylan, Liu Song, He Rui, Cassabois G., Gil B.(Corresp.), Valvin P., Liu Bin, Edgar James h.

Chapître d'ouvrage: Chemistry Of Materials, vol. 8 p.9931-9935 (2020)


Ref HAL: hal-02986306_v1
DOI: 10.1039/d0tc02143a
WoS: WOS:000554788100012
Exporter : BibTex | endNote
Résumé:

Hexagonal boron nitride (hBN) is an important insulator that is incorporated into numerous 2D electronic, optoelectronic, and photonic devices, whereas natural hBN is a mixture of 20% 10B and 80% 11B isotopes, and monoisotopic hBN is a variant with just a single boron isotope, either 10B or 11B. Consequently, monoisotopic hBN has a higher thermal conductivity and a stronger neutron absorption (in the case of h10BN), making it superior for neutron detectors, heat management materials in nano flexible electronic devices, and phonon polariton-based nanophotonics. Here we synthesized approximately monoisotopic hBN using boron powder containing a single boron isotope and nitrogen, and grew single crystals from a Fe–Cr metal flux at atmospheric pressure. Narrow Raman peaks from the shear (r1.3 cm