|Analysis of low-threshold optically pumped III-nitride microdisk lasers |
Auteur(s): Tabataba-vakili Farsane, Brimont C., Alloing Blandine, Damilano Benjamin, Doyennette L., Guillet T., Kurdi Moustafa, Chenot Sébastien, Brändli Virginie, Frayssinet Eric, Duboz Jean-Yves, Semond Fabrice, Gayral Bruno, Boucaud Philippe
Ref HAL: hal-02946015_v1
Exporter : BibTex | endNote
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm 2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm 2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.