Auteur(s): Grigelionis I., Diakonova N., Knap W., Teppe F., Prystawko P., Kasalynas I.
(Article) Publié: Solid State Communications, vol. 320 p.114019 (2020)
Ref HAL: hal-02986295_v1
DOI: 10.1016/j.ssc.2020.114019
WoS: WOS:000576648100003
Exporter : BibTex | endNote
Résumé:
The electrically excited impurity emission from AlGaN/GaN high electron mobility transistor (HEMT) structures in external magnetic field varying from 1.2 T to 1.5 T was investigated in this work at temperature of 4.2 K. We have observed the sharp emission line at (263 ± 1) cm−1 with FWHM of (5.8 ± 0.8) cm−1, which we have attributed to radiative electronic transitions in residual oxygen impurity atoms. The blueshift of resonant transition frequency due to presence of external magnetic field was observed. The width of the peak was found to be defined mainly by the thermal broadening at 4.2 K.