Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias Auteur(s): Diakonova N., Karandashev S.A., Levinshtein M.E., Matveev B.A., Remennyi M.A. (Article) Publié: Infrared Physics Technology, vol. 111 p.103460 (2020) Texte intégral en Openaccess : |