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- Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies doi link

Auteur(s): Asgari Mahdi, Coquillat D., Menichetti Guido, Zannier Valentina, Diakonova N., Knap W., Sorba Lucia, Viti Leonardo, Vitiello Miriam Serena

(Article) Publié: Nano Letters, vol. 21 p.8587-8594 (2021)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-03448548_v1
Ref Arxiv: 2109.04948
DOI: 10.1021/acs.nanolett.1c02022
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies.