Ref HAL: hal-03428861_v1
DOI: 10.1088/2040-8986/ac253d
Exporter : BibTex | endNote
Résumé:

The possibility of amplification of the coupled plasmon-optical phonon (LO) mode in HgTe quantum wells (QWs) is theoretically considered assuming an inverted band population. We calculate the dispersion of the plasmon-LO modes taking into account the spatial dispersion of the electronic polarizability. It is shown that stimulated emission of the plasmon-LO mode is possible in the frequency range corresponding to the Reststrahlen band of GaAs both in a 6-nm-wide HgTe/CdTe QW and in a 5-nm-wide HgTe/Cd 0.7 Hg 0.3 Te QW grown on the (013) plane. Due to the anisotropy of the dispersion law for the plasmon-LO mode, the [03-1] direction appears to be optimal for generation.