Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser Auteur(s): (Article) Publié: Physical Review Applied, vol. 18 p.044029 (2022) Texte intégral en Openaccess : Ref HAL: hal-03521600_v2 Ref Arxiv: 2201.04348 DOI: 10.1103/PhysRevApplied.18.044029 WoS: WOS:000871068700003 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote Résumé: We experimentally demonstrate the difference between a ridge polariton laser and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20-60µm long GaN etched ridge structures with vertical Bragg refectors. We investigatethe laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversionlesspolaritonic gain about 10 times larger than in equivalent GaN lasers. This combination of a very short injection section and a strong gain paves the way to compact microlasers with nonlinear functionalities for integrated photonics. |