Ref HAL: hal-03703868_v1
DOI: 10.1021/acsphotonics.1c01729
Exporter : BibTex | endNote
Résumé:

A porous InGaN/GaN blue light-emitting diode isdemonstrated using selective area sublimation. Transmissionelectron microscopy reveals that the structure is porous down tothe Si substrate; however, the porosity is higher in the GaN buffer,while smaller pores are observed in the active region. This changeof porosity between the active region and the buffer is explained bythe modification of the dislocation pattern in the heterostructure,which is evidenced by weak beam transmission electronmicroscopy on a nonporosified reference sample. Cathodolumi-nescence mapping and electron beam-induced current microscopy(EBIC) analyses are used to probe the impact of porosification onthe optical and electrical properties of the structure at nanoscaledimensions. It is observed that neither the quantum well emissionnor the p−n junction EBIC spatial profile was degraded after porosification with respect to the nonannealed reference sample. A light-emitting diode with a fully porous active region is fabricated using a parylene pore filling for electrical insulation, and its electroluminescence is analyzed.