Ref HAL: hal-04104595_v1
DOI: 10.1016/j.infrared.2022.104301
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Résumé:

The frequency and current dependences of the optical output spectral noise density, Slph, in p-InAsSbP/n-InAs infrared light emitting diodes (LEDs) has been measured for the first time. LEDs with emission centered at wavelengths  = 2.8 and 3.5 µm have been studied. In both cases, in the frequency range 2 ≤ f ≤ 100 Hz the noise spectrum is 1/f like. At constant LED pumping current, Slph is proportional to the photocurrent squared (~ Iph2). The 1/f noise intensity Slph for the LED with emission centered at  = 2.8 µm is ~2 times higher. In the LED pumping current range 0.02  ILED  0.1 A (60  jLED  300 A/cm2) the optical output 1/f noise is practically independent of ILED. The intensity of the LEDs’ optical output 1/f noise is less than the intensity of the photodiode reverse bias current noise by ~4 orders of magnitude.