Ref HAL: hal-04282047_v1
DOI: 10.1364/OE.498479
Exporter : BibTex | endNote
Résumé:

Terahertz time-domain spectroscopy (THz-TDS) at room temperature and standard atmosphere pressure remains so far the backbone of THz photonics in numerous applications for civil and defense levels. Plasmonic microstructures and metasurfaces are particularly promising for improving THz spectroscopy techniques and developing biomedical and environmental sensors. Highly doped semiconductors are suitable for replacing the traditional plasmonic noble metals in the THz range. We present a perfect absorber structure based on semiconductor III-Sb epitaxial layers. The insulator layer is GaSb while the metal-like layers are Si doped InAsSb (∼ 5·10 19 cm -3 ). The doping is optically measured in the IR with polaritonic effects at the Brewster angle mode. Theoretically, the surface can be engineered in frequency selective absorption array areas of an extensive THz region from 1.0 to 6.0 THz. The technological process is based on a single resist layer used as hard mask in dry etching defined by electron beam lithography. A wide 1350 GHz cumulative bandwidth experimental absorption is measured in THz-TDS between 1.0 and 2.5 THz, only limited by the air-exposed reflectance configuration. These results pave the way to implement finely tuned selective surfaces based on semiconductors to enhance light-matter interaction in the THz region.