Auteur(s): Briot O., Briot N., Cloitre T., Aulombard R., Gil B., Mathieu H.
(Article) Publié: Semiconductor Science And Technology, vol. 6 p.695 (1991)
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Résumé:
Recently, III-V/II-VI single and double heterostructures have attracted much attention for device applications. The first demonstration of metal organic vapour phase epitaxy (MOVPE) of a GaAs/ZnSe/GaAs double heterostructure is reported. The influence of the ZnSe layer on the top GaAs layer is discussed from photoluminescence and reflectivity results.