Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)


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- Boron nitride for excitonics, nano photonics, and quantum technologies doi link

Auteur(s): Gil B.(Corresp.), Cassabois G., Cusco R., Fugallo Giorgia, Artus Lluis

(Article) Publié: Nanophotonics, vol. p.2025 (2020)
Texte intégral en Openaccess : openaccess

Ref HAL: hal-02884600_v1
DOI: 10.1515/nanoph-2020-0225
Exporter : BibTex | endNote

We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we high- light its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Sec- ond, we shift towards nanophotonics, for the manage- ment of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 μm in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.