Deep ultra-violet semiconductor lasers have numerous applications for optical storage, biochemistry or optical interconnects. UV-emitting ridge lasers usually embed nitride heterostructures grown on complex buffer layers or expensive substrates – an approach that cannot be extended to nano-photonics and microlasers. We demonstrate here the first deep ultra-violet microlaser operating at 275nm at room temperature under optical pumping. It is based on binary GaN/AlN thin quantum wells (QWs) grown on a silicon substrate and embedded in microdisk resonators. Those QWs indeed combine UV-C emission with a good emission efficency even at room temperature thanks to the huge band offset beetwen GaN and AlN. They form the active layer of state-of-the-art microdisk resonators, which electromagnetic modes, the so-called Whispering-Gallery Modes (WGMs), present a low modal volume and a high quality factor (Q=6000). This active layer can form free-standing membranes and is further compatible with future developments of nitride nanophotonic platforms on silicon.

We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarizationgenerated by the second-order nonlinear susceptibilities and the electric fields of the fundamental cavity mode.

In this work we study the spatial distribution of photon modes confined in a 0D cavity and a 1D W1 on AlN-based photonic crystal membranes by spectrally resolved confocal microscopy in the ultra-violet spectral range. The analysis of the influence of the fabrication-induced disorder of the PC on the photon modes show that the cavity modes are robust with respect to disorder, whereas the 1D modes of the W1 waveguide are localized near its cut-off frequency. Modifications of the photon local density of states will be compared to simulations of weakly disordered photonic structures.

The dynamics of the free-exciton capture by boron acceptors and phosphorus donors in diamond is observed in the picosecond range by time-resolved photoluminescence experiments at low temperature. The formation of boron-bound excitons is observed with a delay of 410 ps after the formation of free excitons. For phosphorus, this delay is 120 ps. This is the result of the free-exciton capture by B0 and P0 impurities. The lifetimes of boron- and phosphorus-bound excitons are measured and found to be equal to 270 and 70 ps, respectively. These values are about four orders of magnitude shorter than for the same impurities in silicon. Ei being the ionization energy of dopants, these results scale well with the E4i dependence of the Auger recombination rate expected for bound excitons in indirect band-gap semiconductors.

ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the generation and control of polariton condensates up to room temperature.The realization of planar ZnO microcavities with good quality factors has long been a strong challenge. We first demonstrated in 2011 a ZnO polariton laser operating at zero exciton-photon detuning and a temperature of 120 K [1], based on a hybrid microcavity (AlN/AlGaN DBR, MBE-grown ZnO, SiO2/SiN DBR) with a quality factor Q=450. This value was still too small to allow the observation of polariton lasing up to room temperature. A different approach was implemented based on a ZnO active layer of high crystalline quality, embedded between two dielectric DBR; such a fully-hybrid microcavity exhibits a high quality factor (Q>2000) and a large Rabi splitting (250 meV). We have observed the condensation of polaritons in this bulk ZnO microcavity over an unprecedented range of exciton-photon compositions and of temperatures, up to room temperature [2]. The complete phase diagram of the ZnO polariton laser has been measured, showing that its threshold is only 6 times larger at 300 K than at 8 K. It is in a good qualitative agreement with the simulations of exciton and polariton relaxation in a kinetic model. This tunability represents an important progress compared to our previous demonstration [1], as well as to other recent reports [3]. It also confers a strong advantage to ZnO microcavities compared to GaN [4], since strong excitonic condensates can here be investigated.The cavity with Q>2000 however presents a strong gradient of the cavity thickness hindering the generation of extended condensates. Equivalent cavities without such a gradient have therefore been developed in the last years, based on high quality AlN/AlGaN DBRs on mesas. Our most recent investigations are dedicated to the role of the shape of the exciting laser spot on the condensate generation. Condensate propagation is observed under tightly focused excitation, driven by the interaction with the reservoir as in GaAs microcavities, whereas localization of the polariton condensates is observed for larger excitation areas.

Spatial observation and optical manipulation of polariton quantum liquids are raising a large interest in the studies of polariton condensates in microcavities [1]. In this work, we report the study of polariton condensates in a semi-hybrid ZnO microcavity where the condensation of polaritons up to room temperature has been achieved. This cavity is based on high quality AlN/AlGaN DBRs on 200µm ∗ 200µm mesas. The obtention of a low condensation threshold in a microcavity is related to its local quality factor Q. However the generation of the condensate also strongly depends on the photonic disorderof the cavity i.e. on polariton localization. The purpose of this work is to demonstrate the influence of this last parameter using different large excitation shapes. Figure 1.a shows a cross sectional energy mapping below threshold of polaritons at negative detuning. It is done by scanning the sample with a focused CW excitation spot. The energy fluctuation is less than 4 meV and the local quality factor is above 1900. We then excite the sample with large excitation areas. The photoluminescence profile created by an elongated excitation (60µm ∗ 5µm) is shown on figure 1.b. The intensity profile indicates that the polariton condensate is not uniform. In fact we can clearly see the localization of polaritons on sitesthat can be separated by more than 10 µm . We assume that this effect is related to the photonic disorder. The impact of size and shape of the excitation area on the condensate intensity profile will be discussed.