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(110) Production(s) de BRIMONT C.
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Polariton with high quality factor in a hybrid ZnO-based microcavity
Auteur(s): Mexis M. , Brimont C., Guillet T., Gil B., Bretagnon T., Zúñiga-pérez Jesús, Frayssinet Eric, Leroux Mathieu, Semond Fabrice, Orosz Laurent, Reveret François, Disseix Pierre, Leymarie Joel, Mihailovic Martine, Bouchoule Sophie
(Affiches/Poster)
OECS12 (PARIS, FR), 2011-09-13Texte intégral en Openaccess : 
Résumé: Polariton with high quality factor in a hybrid ZnO-based microcavity
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TRANSITION FROM STRONG COUPLING TO EXCITONIC
LASING IN A ZNO MICROCAVITY
Auteur(s): Brimont C., Mexis M., Guillet T., Bretagnon T., Gil B., Valvin P., Medard F., Mihailovic Martine, Zúñiga-pérez Jesús, Leroux Mathieu, Semond Fabrice, Bouchoule Sophie
(Affiches/Poster)
OECS12 (PARIS, FR), 2011-09-13Texte intégral en Openaccess :
Résumé: TRANSITION FROM STRONG COUPLING TO EXCITONIC
LASING IN A ZNO MICROCAVITY
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Laser emission with excitonic gain in a ZnO planar microcavity 
Auteur(s): Guillet T., Brimont C., Valvin P., Gil B., Bretagnon T., Medard F., Mihailovic Martine, Zúñiga-Pérez Jesús, Leroux Mathieu, Semond F., Bouchoule Sophie
(Article) Publié:
Applied Physics Letters, vol. 98 p.3 (2011)
Texte intégral en Openaccess : 
Ref HAL: hal-00554480_v3
Ref Arxiv: 1106.0183
DOI: 10.1063/1.3593032
WoS: 000291041600005
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
23 Citations
Résumé: The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Low temperature reflectivity study of ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
Auteur(s): Beaur L., Bretagnon T., Brimont C., Guillet T., Gil B., Tainoff Dimitri, Teisseire M., Chauveau J.M.
(Article) Publié:
Applied Physics Letters, vol. 98 p.101913 (2011)
Texte intégral en Openaccess :
Ref HAL: hal-00553820_v2
Ref Arxiv: 1101.1733
DOI: 10.1063/1.3565969
WoS: 000288277200026
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
34 Citations
Résumé: We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons built from the spin-orbit split-off valence band, the analog of exciton C in bulk ZnO are detected in normal incidence reflectivity experiments using a photon polarized along the c axis of the wurtzite lattice. Experiments performed in the context of an orthogonal photon polarization, at 90° of this axis, reveal confined states analogs of A and B bulk excitons. Envelope function calculations which include excitonic interaction nicely account for the experimental report.
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Strong exciton-photon coupling in ZnO microcavities : Promoting polariton physics up to 300K
Auteur(s): Guillet T., Faure Stéphane, Brimont C., Bretagnon T., Gil B., Zúñiga-Pérez Jesús, Frayssinet Eric, Semond Fabrice, Leroux Mathieu, Bouchoule Sophie
Conference: 9th Japan-France Workshop on Nanomaterials (Toulouse, FR, 2010-11-24)
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Photonic cavities embedding GaN quantum dots for the UV spectral range
Auteur(s): Guillet T., Mexis M., Brimont C., Bretagnon T., Sergent Sylvain, Semond Fabrice, Leroux Mathieu, Néel Delphine, David Sylvain, Checoury X., Boucaud Philippe, Sam-Giao Diane, Gayral B.
Conference: 3N Workshop Nanolum (Porquerolles, FR, 2010-06-27)
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Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering
Auteur(s): Petersen Julien, Brimont C., Gallart Mathieu, Schmerber Guy, Gilliot Pierre, Ulhaq-Bouillet Corinne, Rehspringer Jean-Luc, Colis Silviu, Becker Claude, Slaoui Abdelillah, Dinia Aziz
(Article) Publié:
Journal Of Applied Physics, vol. 107 p.123522 (2010)
Texte intégral en Openaccess : 
Ref HAL: hal-00545160_v1
PMID 20644657
DOI: 10.1063/1.3436628
WoS: 000279993900049
Exporter : BibTex | endNote
56 Citations
Résumé: We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu2+ and Eu3+ into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn2+ as Eu2+ into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu2O3 oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the D-5(0)-> F-7(2) Eu3+ transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu3+ ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films. (C) 2010 American Institute of Physics. [doi : 10.1063/1.3436628]
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