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DOI: 10.1103/PhysRevB.78.235323
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Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.

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Ref Arxiv: 0803.0899
DOI: 10.1103/PhysRevB.77.235315
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We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape, in order to explain the quantitative differences between our observations and those previously reported on, e.g. CdTe- or InAs-based quantum dots.

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DOI: 10.1051/epjap:2007006
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We report continuous wave and time resolved photoluminescence studies of self-assembled InP quantum dots grown by metalorganic chemical vapor deposition. The quantum dots are embedded into indirect band-gap In0.5Al0.5P layers or In0.5Al0.3Ga0.2P layers with a conduction band line-up close to the direct-to-indirect crossover. As revealed by photoluminescence spectra, efficient interdiffusion of species from the barrier layers produces (Al,In)P or (Al,Ga,In)P-dots. This interdiffusion creates potential barriers that are repulsive for electrons of X valleys around the QDs. Both samples show a fast exponential decay component with a time constant between 0.5 and 0.7 ns. In addition, the sample with indirect band gap matrix shows a slow non-exponential time-decay, which is still visible after more than 100 µs. The fast component is attributed to direct recombination of electron-hole pairs in the dots whilst the slow component, which follows a power law t^-0.75 results from recombination of holes in the dots and electrons in metastable states around the dots.

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DOI: 10.1002/pssc.200673559
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Highly crystalline zinc oxide (ZnO) nanomaterials are synthesized using a seeded growth sol-gel method. In order to control the morphology and the organization of the ZnO nanomaterials, a double hydrophilic block copolymer has been introduced during the seeded growth synthesis: the Polyacrylic acid-Polyacrylamide (PAA-PAM). Depending on the amount of PAA-PAM copolymers, different morphologies were obtained, such as ZnO nanostructured spheres or flat hexagonal crystals. Thus, systematic studies have been done to investigate the influence of the copolymer addition on ZnO nanomaterial morphologies and explain the mechanisms of the morphological modifications.

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