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(64) Production(s) de KONCZEWICZ L.
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High Temperature Electrical Transport Study of MBE grown Mg-doped AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24 |
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High temperature electrical transport study of n-type Si-doped AlN Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Weyher J.l., Dziecielewski I, Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien, Gil B. (Affiches/Poster) International Workshop on Ultraviolet Materials and Devices (FUKUOKA, JP), 2017-11-14 |
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High Temperature Annealing of MBE-grown Mg-doped GaN  Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Al Khalfioui M., Matta S., Leroux M., Damilano B., Brault J.
Conference: 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (Peking, CN, 2017) |
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers Auteur(s): Jayasakthi M., Juillaguet S., Peyre H., Konczewicz L., Moret M., Briot O., Baskar K., Contreras S.
Conference: 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (PEKIN, CN, 2017) |
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Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates
Auteur(s): Contreras S., Konczewicz L., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Juillaguet S.
Conference: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, GR, 2016-09) |
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Electrical transport properties of p-type 4H-SiC
Auteur(s): Contreras S.
Conférence invité: E-MRS : Wide bandgap materials for electron devices (Lille, FR, 2016-05-02) |
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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions Auteur(s): Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.
(Article) Publié:
Acta Physica Polonica A, vol. 129 p.A126-A128 (2016)
Texte intégral en Openaccess : |
