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(64) Production(s) de KONCZEWICZ L.
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC  Auteur(s): Contreras S., Konczewicz L., Kwasnicki P., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Kayambaki Maria, Juillaguet S., Zekentes Konstantinos
Conference: 16th International Conference on Silicon Carbide and Related Materials (Catane, IT, 2015-10-05) |
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Auteur(s): Zielinski Marc, Arvinte Roxana, Chassagne Thierry, Michon Adrien, Portail Marc, Kwasnicki P., Konczewicz L., Contreras S., Juillaguet S., Peyre H.
Conference: ICSCRM (Giardini Naxos, FR, 2015-10-02) |
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High temperature electrical transport study of Si-doped AlN Auteur(s): Contreras S., Konczewicz L., Ben Messaoud Jaweb, Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Article) Publié: Superlattices And Microstructures, vol. 98 p.253-258 (2016) |
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Influence of AlN thickness on AlGaN epilayer grown by MOCVD Auteur(s): Jayasakthi M., Juillaguet S., Peyre H., Konczewicz L., Baskar K., Contreras S. (Article) Publié: Superlattices And Microstructures, vol. 98 p.515-521 (2016) |
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A High-Temperature Molecular Ferroelectric Zn/Dy Complex Exhibiting Single-Ion-Magnet Behavior and Lanthanide Luminescence Auteur(s): Long Jérôme, Rouquette Jérôme, Thibaud Jean-Marc, Ferreira Rute, Carlos Luis, Donnadieu Bruno, Vieru Veaceslav, Chibotaru Liviu, Konczewicz L., Haines Julien, Guari Yannick, Larionova Joulia
(Article) Publié:
Angewandte Chemie International Edition, vol. 54 p.2236 - 2240 (2015)
Texte intégral en Openaccess : |
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The influence of growth direction on electrical and optical properties of GaN:Mg single crystals grown by High Nitrogen Pressure Solution method Auteur(s): Sadovyi B, Amilusik M, Staszczak G, Bockowski M, Grzegory Izabella, Porowski S, Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-staszewska Elzbieta, Piotrzkowski Ryszard
Conference: The 44th International School and Conference on the Physics of Semiconductors (Wisla, PL, 2015-06-20) |
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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization Auteur(s): Florentin Matthieu, Rafi Joan Marc, Chevalier Florian, Soler Victor, Konczewicz L., Contreras S., Juillaguet S., Montserrat Josep, Godignon Philippe
Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09) |
