Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)

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(64) Production(s) de KONCZEWICZ L.

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+ Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction doi link

Auteur(s): Delmas M., Rodriguez J. B., Taalat R., Konczewicz L., Desrat W., Contreras S., Giard E., Ribet-Mohamed I., Christol Philippe

Conference: 8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP) (Santa Fe, US, 2014-06-29)

Texte intégral en Openaccess : openaccess


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+ Pressure-induced penetration of guest molecules in high-silica zeolites: the case of mordenite doi link

Auteur(s): Arletti Rossella, Leardini L., Vezzalini Giovanna, Quartieri Simona, Gigli Lara, Santoro Mario, Haines Julien, Rouquette Jérôme, Konczewicz L.

(Article) Publié: Physical Chemistry Chemical Physics, vol. 17 p.24262 (2015)


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+ Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts doi link

Auteur(s): Thierry-Jebali Nicolas, Lazar Mihai, Vo-Ha A., Carole D., Soulière V., Henry A, Planson Dominique, Ferro Gabriel, Konczewicz L., Contreras S., Brylinski C., Brosselard Pierre

(Article) Publié: Materials Science Forum, vol. p. (2014)
Texte intégral en Openaccess : openaccess


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+ Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg doi link

Auteur(s): Dmowski L., Baj M., Wang X., Zheng T., Ma D., Konczewicz L., Suski T.

(Article) Publié: Journal Of Applied Physics, vol. 115 p. (2014)


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+ Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD doi link

Auteur(s): Kwasnicki P., Arvinte Roxana, Peyre H., Zielinski Marcin, Konczewicz L., Contreras S., Camassel J., Juillaguet S.

Conference: HETEROSIC 2013 (nice, FR, 2013-06)
Actes de conférence: Material Sciences Forum, vol. 806 p.51 - 55 (2014)


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+ Dopant-free superlattice MWIR pin photodiode hal link

Auteur(s): Christol Philippe, Delmas M., Rodriguez J.-B., Konczewicz L., Giard E., Ribet-Mohamed I.

Conference: Quantum Structure Infrared Photodetector (QSIP) Conference (Santa-Fe, US, 2014)


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+ Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Auteur(s): Thierry-Jebali Nicolas, Lazar Mihai, Vo-Ha Arthur, Carole Davy, Soulière Véronique, Henry Anne, Planson Dominique, Ferro Gabriel, Konczewicz L., Contreras S., Brylinski Christian, Brosselard Pierre

Conference: CSCRM (Miyazaki, JP, 2013-09-29)
Actes de conférence: Proceedings of the 2013 European Conference on Silicon Carbide and Related Materials, vol. 778-780 p.639 - 644 (2014)


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