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(64) Production(s) de KONCZEWICZ L.
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Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C  Auteur(s): Bouguen Laure, Contreras S., Jouault B., Konczewicz L., Camassel J., Cordier Y., Azize M., Chenot S., Baron N. (Article) Publié: Applied Physics Letters, vol. 92 p.043504 (2008) |
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Parallel conduction in p-type gallium nitride homo-structures Auteur(s): Litwin-Staszewska Elzbieta, Konczewicz L., Piotrzkowski Ryszard, Dmowski Leslaw, Czernecki Robert, Prystawko Pawel (Article) Publié: Semiconductor Science And Technology, vol. 23 p.095007 (2008) |
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Pressure characterization of AlGaN/GaN Hall sensors Auteur(s): Konczewicz L., Contreras S., Bouguen Laure, Jouault B., Camassel J., Cordier Yvon
Conference: 13th International Conference on High Pressure Semiconductor Physics (Fortaleza,, BR, 2008-07-22) |
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Improvement material performances of InAs/GaSb superlattice photodiodes Auteur(s): Chaghi R., Cuminal Y., Aït-Kaci H., Rodriguez Jean-Baptiste, Grech P., Konczewicz L., Christol Philippe
Conference: EXMATEC (Łódź, PL, 2008-06-02) |
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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence Auteur(s): Bouguen Laure, Contreras S., Jouault B., Konczewicz L., Cordier Y., Azize M., Chenot S., Baron N.
Conference: Proceeding of 16th European workshop on Heterostructure Technology (Frejus, FR, 2007-09) |
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Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method Auteur(s): Contreras S., Zielinski M., Konczewicz L., Blanc C., Juillaguet S., Mueller R., Kuenecke U., Wellmann P., Camassel J.
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh (PA), FR, 2005-09-18) |
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Calibration of the PEC Etching Method of GaN Auteur(s): Lewandowska Renata, Weyher J.L., Albrecht M., Konczewicz L., Łucznik Bolesław
Conference: EXMATEC (Cadiz, ES, 2006-05-14) |
