Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride. However, besides many theoretical predictions, at present, there are poor data on experimentally revealed p-type conductivity and evaluation of Zn activation energy by means of electrical transport measurements. In this paper, ammonothermal crystallization of bulk GaN:Zn monocrystals is reported. Despite a high doping level of Zn (up to 2 × 1020 cm−3), p-type conductivity with hole concentration as low as of 4 × 1015 cm−3 at room temperature and mobility about 3 cm2/V s was observed. A deep nature of the Zn acceptor was proved, as the ionization energy can exceed 260 meV. In addition, conduction in the impurity band appeared at temperatures as high as room temperature

Recently, filling zeolites with gaseous hydrocarbons at high pressures in diamond anvil cells has been carried out to synthesize novel polymer-guest/zeolite-host nanocomposites with potential, intriguing applications, although the small amount of materials, 10–7 cm3, severely limited true technological exploitation. Here, liquid phenylacetylene, a much more practical reactant, was polymerized in the 12 Å channels of the aluminophosphate Virginia Polytechnic Institute—Five (VFI) at about 0.8 GPa and 140 °C, with large volumes in the order of 0.6 cm3. The resulting polymer/VFI composite was investigated by synchrotron X-ray diffraction and optical and 1H, 13C, and 27Al nuclear magnetic resonance spectroscopy. The materials, consisting of disordered π-conjugated polyphenylacetylene chains in the pores of VFI, were deposited on quartz crystal microbalances and tested as gas sensors. We obtained promising sensing performances to water and butanol vapors, attributed to the finely tuned nanostructure of the composites. High-pressure synthesis is used here to obtain an otherwise unattainable true technological material.

This paper discusses the results of high temperature resistivity and Hall effect studies of Mg-doped GaN and AlxGa1−xN epilayers (0.05 < x < 0.23). The studied samples were grown by molecular beam epitaxy on low temperature buffers of GaN and AlN deposited on a sapphire substrate. The experiments were carried out at temperatures ranging from 300 up to 1000 K. Up to a certain critical temperature TC (around 800 K), a typical increase of the conduction processes due to the excitation of impurity states has been observed with an activation energy of about EA = 200 meV. However, at this critical temperature TC, an annealing effect was observed in all the investigated samples. At this critical temperature, the increase in the free carrier concentration as a function of time leads to an irreversible decrease in the samples’ resistivity of more than 60%. The observed temperature dependences of the electrical transport properties are analyzed in the frame of an impurity model including shallow donors and Mg-related acceptors (with EA ∼ 200 meV). In some cases, an additional conduction channel not related to free carriers in the valence band must be taken into account. This can lead to an incorrect determination of hole concentration in the valence band, an important parameter in the process of radiative recombination.

Photoluminescence of GaN and AlxGa1-xN (x≤ 0.2) doped with Mg and grown by molecular beam epitaxy

Photoluminescence of Mg−doped GaN and AlxGa1−xN (x< 0.2) grown by molecular beam epitaxy

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Quantum Dot based UV Light Emitting Diodes