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(321) Production(s) de GIL B.
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Homogeneous Linewidth Of The Intraband Transition At 1.55 μm In GaN/AlN Quantum Dots
Auteur(s): Nguyen D. t., Wuster W, Voisin C., Roussignol Ph., Tchernycheva M., Julien F. h., Guillot F., Monroy E., Gil B., Cassabois G.
Conference: ICNS-9 (Glasgow, GB, 2011-07-11)
Résumé: We present nonlinear optical spectroscopy in GaN/AlN quantum dots that allow for the measurements of the homogeneous broadening of the intraband transition at 1.55 µm. We find that the population relaxation is driven by Auger processes, which play on the contrary a minor role in the decoherence dynamics.
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Laser emission with excitonic gain in a ZnO planar microcavity 
Auteur(s): Guillet T., Brimont C., Valvin P., Gil B., Bretagnon T., Medard F., Mihailovic Martine, Zúñiga-Pérez Jesús, Leroux Mathieu, Semond F., Bouchoule Sophie
(Article) Publié:
Applied Physics Letters, vol. 98 p.3 (2011)
Texte intégral en Openaccess : 
Ref HAL: hal-00554480_v3
Ref Arxiv: 1106.0183
DOI: 10.1063/1.3593032
WoS: 000291041600005
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
23 Citations
Résumé: The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Low temperature reflectivity study of ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
Auteur(s): Beaur L., Bretagnon T., Brimont C., Guillet T., Gil B., Tainoff Dimitri, Teisseire M., Chauveau J.M.
(Article) Publié:
Applied Physics Letters, vol. 98 p.101913 (2011)
Texte intégral en Openaccess :
Ref HAL: hal-00553820_v2
Ref Arxiv: 1101.1733
DOI: 10.1063/1.3565969
WoS: 000288277200026
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
34 Citations
Résumé: We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons built from the spin-orbit split-off valence band, the analog of exciton C in bulk ZnO are detected in normal incidence reflectivity experiments using a photon polarized along the c axis of the wurtzite lattice. Experiments performed in the context of an orthogonal photon polarization, at 90° of this axis, reveal confined states analogs of A and B bulk excitons. Envelope function calculations which include excitonic interaction nicely account for the experimental report.
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Excitonic Splittings in aluminum nitride
Auteur(s): Gil B., Felbacq D., Guizal B., Bouchitte G.
Conférence invité: Proceedings of the second Meijo international symposium on nitride semiconductors 2010 (MSN2010) (Nagoya, JP, 2010-11-27)
Ref HAL: hal-00633651_v1
Exporter : BibTex | endNote
Résumé: We address the computation of excitonic energies in the context of anisotropic dispersio relations and dielectric constant
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Growth of indium nitride and its heterostructures: challenges and drawbacks
Auteur(s): Gil B.
Conférence invité: 10th Akasaki Research center symposium: To the new horizon of the nitride research (Nagoya, JP, 2010-11-26)
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Quantitative interpretation of the excitonic splitting in aluminum nitride
Auteur(s): Gil B., Guizal B., Felbacq D., Bouchitté Guy
(Article) Publié:
The European Physical Journal Applied Physics, vol. 53 p.3 (2011)
Texte intégral en Openaccess : 
Ref HAL: hal-00633617_v1
DOI: 10.1051/epjap/2010100448
WoS: 000288591700003
Exporter : BibTex | endNote
10 Citations
Résumé: We address the interpretation of the splitting between the ground state excitonic transition which indicates the energy of the lowest direct band gap in AlN bulk films and epilayers, and a 36-38 meV higher energy companion. We demonstrate that this splitting is consistent with the initial interpretation in terms of 1s - 2s excitonic splitting by using a calculation of the exciton binding energy which includes mass anisotropy and anisotropy of the dielectric constant. Analytical expressions are proposed to compute the evolution of 1s and 2s excitonic energies using an anisotropy parameter . We show that the values of the dielectric constant that are required to fit the data are 8.7 and 10, values different from the couple of values 7.33 and 8.45 erroneously obtained after a fitting procedure using a spherical description of the long range Coulomb interaction and the classical textbook n-2 spectrum of the excitonic eigenstates. Starting from now, our values are the recommended ones.
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