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(321) Production(s) de GIL B.
Photonics with hexagonal boron nitride Auteur(s): Caldwell Joshua David, Aharonovich Igor, Cassabois G., Edgar James H., Gil B., Basov D.N. (Article) Publié: Nature Reviews Materials, vol. 8 p.1 (2019) |
Direct band-gap crossover in epitaxial monolayer boron nitride Auteur(s): Elias C., Valvin P., Pelini T., Summerfeld Alex, Mellor Chris, Cheng T.s., Eaves L., Foxon C.t., Beton Peter, Novikov Sergei, Gil B., Cassabois G. (Article) Publié: Nature Communications, vol. 1 p.1 (2019) Texte intégral en Openaccess : |
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure Auteur(s): Koronski Kamil, Kaminska Agata, Zighadlo Nikolai d, Elias C., Cassabois G., Gil B. (Article) Publié: Superlattices And Microstructures, vol. 131 p.1 (2019) Texte intégral en Openaccess : |
Influence of isotopic substitution on the anharmonicity of the interlayer shear mode of h-BN Auteur(s): Cusco Ramon, Edgar James H., Liu Song, Cassabois G., Gil B., Artus Luis (Article) Publié: Physical Review B, vol. 99 p.085428 (2019) Texte intégral en Openaccess : |
Structural and Optical Properties of Zn1-xMgxO Prepared by Calcination of ZnO + Mg(OH)2 after Hydro Micro Mechanical Activation Auteur(s): Vuong Thi Quynh Phuong, Lair Valentin, Lacoste Francois, Halloumi Samy, Coindeau Stéphane, Thiel Julien, Shubina T., Pauthe Monique, Gil B. (Article) Publié: Annalen Der Physik, vol. p.1800379 (2019) |
Photoluminescence of GaN and AlxGa1-xN (x≤ 0.2) doped with Mg and grown by molecular beam epitaxy Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S., Konczewicz L., Gil B., Brochen S. (Affiches/Poster) JNMO (Cap Esterel-Aguay, FR), 2018-06-13 |
(Al,Ga)N quantum dots for deep UV LEDs Auteur(s): Brault Julien, Matta S., Al khalfioui Mohamed, Korytov M, Ngo T. H., Vuong P., Leroux Mathieu, Damilano Benjamin, Chenot S., Vennegues P, Duboz J. y., Massies Jean, Chaix C., Peyre H., Juillaguet S., Contreras S., Gil B.
Conference: International Workshop on Nitride Semiconductor (Kanazawa, JP, 2018-11-11) |