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(321) Production(s) de GIL B.
Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy Auteur(s): Rosales D., Gil B., Bretagnon T., Brault Julien, Vennegues Philippe, Nemoz Maud, de Mierry Philippe, Damilano Benjamin, Massies Jean, Bigenwald Pierre (Article) Publié: Journal Of Applied Physics, vol. 118 p.024303 (2015) |
Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission Auteur(s): Lekhal K., Damilano B., Ngo H. T., Rosales D., de Mierry P., Hussain S., Vennegues P., Gil B. (Article) Publié: Applied Physics Letters, vol. 106 p.142101 (2015) Texte intégral en Openaccess : |
Determination of carrier diffusion length in GaN Auteur(s): Hafiz Shopan, Zhang Fan, Monavarian Morteza, Avrutin Vitaliy, Morkoc Hadis, Oezguer Uemit, Metzner Sebastian, Bertram Frank, Christen Juergen, Gil B. (Article) Publié: Journal Of Applied Physics, vol. 117 p.013106 (2015) |
Yellow–red emission from (Ga,In)N heterostructures Auteur(s): Damilano Benjamin, Gil B. (Article) Publié: Journal Of Physics D: Applied Physics, vol. 48 p.403001 (2015) |
Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures Auteur(s): Ngo T. H., Gil B., Valvin P., Damilano B., Lekhal Kaddour, de Miery Philippe (Article) Publié: Applied Physics Letters, vol. 107 p.122103 (2015) |
X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVD Auteur(s): Moret M., Briot O., Gil B.
Conference: GALLIUM NITRIDE MATERIALS AND DEVICES X (San Francisco, US, 2015) |
High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2 Auteur(s): Moret M., Briot O., Gil B., Lepetit Thomas, Arzel Ludovic, Barreau Nicolas
Conference: PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV (San Francisco, California, US, 2015) |