Ref HAL: hal-00545949_v1
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Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Ref HAL: hal-00430453_v1
PMID 19905821
Ref Arxiv: 0905.4469
DOI: 10.1103/PhysRevLett.103.186601
WoS: 000271352400032
Ref. & Cit.: NASA ADS
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68 Citations
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We introduce a previously unknown spin-related transport phenomenon, consisting in a transformation (swapping) of spin currents due to the spin-orbit interaction. It originates from the correlation between the spin rotation and the scattering angle. This effect is more robust than the skew-scattering, since it exists already in the first Born approximation. Swapping may lead to the spin accumulation with spin polarization perpendicular to the surface, unlike what happens in the spin Hall effect.

Ref HAL: hal-00430452_v1
Ref Arxiv: 0907.2523
DOI: 10.1007/s10762-009-9564-9
WoS: 000269913200008
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296 Citations
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.

Commentaires: 22 pages, 12 figures, review paper

Ref HAL: hal-00804722_v1
DOI: 10.1142/S0217979209061986
WoS: 000266913000003
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10 Citations
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A review of the phenomenology of the Spin Hall Effect and related phenomena originating from the coupling between spin and charge currents by spin-orbit interaction is presented. The physical origin of various effects in spin-dependent scattering is demonstrated. A previously unknown feature of spin transport, the swapping of spin currents, is discussed.

Ref HAL: hal-00804712_v1
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Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov–de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.

Ref HAL: hal-00391711_v1
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For optical frequencies, there are systems known from the prior art which not only make it possible to represent an object two-dimensionally, but also detect it three-dimensionally, in other words to determine the distance between the object and the detector for individual pixels. In contrast, the object of the present invention is to provide a system and a method for detecting an object three-dimensionally using high-frequency electromagnetic radiation at a frequency in a range of 100 GHz to 10 THz. According to the invention, this object is met by a system for detecting an object three-dimensionally using high-frequency electromagnetic radiation, the system comprising a radiation source for radiating high frequency radiation at a frequency in a range of 100 GHz to 10 THz, a receiver for detecting the high frequency radiation emitted from the radiation source, said receiver comprising an antenna element and a field effect transistor for mixing the high frequency radiation emitted by the radiation source with a local oscillator signal, wherein the field effect transistor comprises a source, a drain and a gate, and comprising a signal source for generating an electric modulation signal, wherein the signal source is connected to the radiation source in such a way that the high frequency radiation can be modulated by the modulation signal, and wherein the signal source is connected to the gate of the field effect transistor in such a way that the sensitivity of the field effect transistor can be modulated using a local oscillator signal coupled at a fixed phase to the modulation signal.

Ref HAL: hal-00378543_v1
Ref Arxiv: 0904.2081
DOI: 10.1063/1.3207886
WoS: 000269288300031
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33 Citations
Résumé:

We report on terahertz radiation detection with InGaAs/InAlAs Field EffectTransistors in quantizing magnetic field. The photovoltaic detection signal isinvestigated at 4.2 K as a function of the gate voltage and magnetic field.Oscillations analogous to the Shubnikov-de Haas oscillations, as well as theirstrong enhancement at the cyclotron resonance, are observed. The results arequantitatively described by a recent theory, showing that the detection is dueto rectification of the terahertz radiation by plasma waves relatednonlinearities in the gated part of the channel.