Ref HAL: hal-00378539_v1
Ref Arxiv: 0901.2712
DOI: 10.1103/PhysRevB.80.121304
WoS: 000270383300007
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29 Citations
Résumé:

The photovoltaic effect induced by terahertz radiation in a gatedtwo-dimensional electron gas in magnetic field is considered theoretically. Itis assumed that the incoming radiation creates an ac voltage between the sourceand gate and that the gate length is long compared to the damping length ofplasma waves. In the presence of pronounced Shubnikov-de Haas oscillations, animportant source of non-linearity is the oscillating dependence of the mobilityon the ac gate voltage. This results in a photoresponse oscillating as afunction of magnetic field, which is enhanced in the vicinity of the cyclotronresonance, in accordance with recent experiments. Another, smooth component ofthe photovoltage, unrelated to SdH oscillations, has a maximum at cyclotronresonance.

Commentaires: 4 pages, 3 figures

Ref HAL: hal-00289346_v1
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The question of why the degree of the dynamical nuclear spin polarization is about 20-50 times lower than predicted. It is shown that this might be due to the nuclear spin diffusion, which evacuates the nuclear polarization from the localized regions where spin pumping occurs.

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A review of spin-charge current coupling and of the Spin Hall Effect predicted by Dyakonov and Perel in 1971. Existing experimental results and the mechanisms resulting in this effect will be discussed.

Ref HAL: hal-00289344_v1
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Résumé:

A review of spin-charge current coupling and of the Spin Hall Effect predicted by Dyakonov and Perel in 1971. Existing experimental results and the mechanisms resulting in this effect will be discussed.

Commentaires: 7036,7036R-1

Ref HAL: hal-00277269_v1
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This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on two- and one-dimensional semiconductor structures are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

Commentaires: Springer Series in Solid-State Sciences Approx. 485 p. 140 illus., Hardcover ISBN: 978-3-540-78819-5 Written for: Libraries, scientists, graduate students

Ref HAL: hal-00804717_v1
DOI: 10.1117/12.798110
WoS: 000260571400011
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2 Citations
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The Spin Hall Effect and related transport phenomena originating from the coupling of the charge and spin currents due to spin-orbit interaction were predicted in 1971 by Dyakonov and Perel [1, 2]. Following the suggestion in [3], the first experiments in this domain were done by Fleisher's group at Ioffe Institute in Saint Petersburg [4, 5], providing the first observation of what is now called the Inverse Spin Hall Effect. As to the Spin Hall Effect itself, it had to wait for 33 years before it was experimentally discovered by two groups in Santa Barbara (US) [6] and in Cambridge (UK) [7]. These observations aroused considerable interest and triggered intense research, both experimental and theoretical, with hundreds of publications. The Spin Hall Effect consists in spin accumulation at the boundaries of a current-carrying conductor, the directions of the spins being opposite at the opposing boundaries. For a cylindrical wire the spins wind around the surface. The boundary spin polarization is proportional to the current and changes sign when the direction of the current is reversed. The term "Spin Hall Effect" was introduced by Hirsch [8] in 1999. It is indeed somewhat similar to the normal Hall effect, where charges of opposite signs accumulate at the sample boundaries due to the action of the Lorentz force in magnetic field. However, there are significant differences. First, no magnetic field is needed for spin accumulation. On the contrary, if a magnetic field perpendicular to the spin direction is applied, it will destroy the spin polarization. Second, the value of the spin polarization at the boundaries is limited by spin relaxation, and the polarization exists in relatively wide spin layers determined by the spin diffusion length, typically on the order of 1 μm (as opposed to the much smaller Debye screening length where charges accumulate in the normal Hall effect).

Ref HAL: hal-00327283_v1
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Résumé:

The theory of the Spin Hall Effect, as well as the existing experimental results are reviewed

Commentaires: Chapter 8