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Spin Hall effect 
Auteur(s): Dyakonov M.
Conférence invité: Fifty Years of Spin Physics (Paris, FR, 2018-06)
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Spin Hall Effect
Auteur(s): Dyakonov M., Khaetskii A.V.
Chapître d'ouvrage: Spin Physics In Semiconductors, vol. p.241-280 (2017)
Ref HAL: hal-02045786_v1
Exporter : BibTex | endNote
Résumé: This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.
Commentaires: 2nd EditionNew edition, updated to include key findings made in the past 10 yearsIntegrates the physics of transport phenomena and elementary magnetism in semiconductors
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Spin Hall magnetoresistance and swapping spin currents (keanote talk)
Auteur(s): Dyakonov M.
Conférence invité: SPIE Optics + Photonics 2017 (San Diego, US, 2017-08-06)
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Microwave-induced resistance oscillations as a classical memory effect
Auteur(s): Dyakonov M.
Conférence invité: International Conference on Physics of Light-Matter Coupling in Nanostructures (Wuerzburg, DE, 2017-07-09)
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Microwave-induced resistance oscillations as a classical memory effect
Auteur(s): Dyakonov M.
Conférence invité: Nanostructures : Physics and Technology (Saint-Petersburg, RU, 2017-05-26)
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Microwave-induced resistance oscillations as a classical memory effect
Auteur(s): Dyakonov M.
Conférence invité: Quantum transport in 2D systems - II (Luchon, FR, 2017-05-20)
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Spin Hall magnetoresistance and swapping spin currents
Auteur(s): Dyakonov M.
Conférence invité: SPINTRONICS X (San Diego, US, 2017)
Actes de conférence: Proceedings of SPIE, vol. 10357 p.UNSP 1035702 (2017)
Ref HAL: hal-02045722_v1
DOI: 10.1117/12.2277959
WoS: WOS:000424081400001
Exporter : BibTex | endNote
1 Citation
Résumé: The spin Hall magnetoresistance is the result of the combined action of the direct and inverse spin Hall effects, and also of the Hanle effect - depolarization of spins by a transverse magnetic field. Swapping spin currents consists in the interchange of the directions of spin polarization and spin flow. Theoretical ideas and experimental results are reviewed.
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