Ref HAL: hal-04760290_v1
DOI: 10.1088/1361-648X/ad399c
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Magnonics is a research field that has gained an increasing interest in both the fundamental and applied sciences in recent years. This field aims to explore and functionalize collective spin excitations in magnetically ordered materials for modern information technologies, sensing applications and advanced computational schemes. Spin waves, also known as magnons, carry spin angular momenta that allow for the transmission, storage and processing of information without moving charges. In integrated circuits, magnons enable on-chip data processing at ultrahigh frequencies without the Joule heating, which currently limits clock frequencies in conventional data processors to a few GHz. Recent developments in the field indicate that functional magnonic building blocks for in-memory computation, neural networks and Ising machines are within reach. At the same time, the miniaturization of magnonic circuits advances continuously as the synergy of materials science, electrical engineering and nanotechnology allows for novel on-chip excitation and detection schemes. Such circuits can already enable magnon wavelengths of 50 nm at microwave frequencies in a 5G frequency band. Research into non-charge-based technologies is urgently needed in view of the rapid growth of machine learning and artificial intelligence applications, which consume substantial energy when implemented on conventional data processing units. In its first part, the 2024 Magnonics Roadmap provides an update on the recent developments and achievements in the field of nano-magnonics while defining its future avenues and challenges. In its second part, the Roadmap addresses the rapidly growing research endeavors on hybrid structures and magnonics-enabled quantum engineering. We anticipate that these directions will continue to attract researchers to the field and, in addition to showcasing intriguing science, will enable unprecedented functionalities that enhance the efficiency of alternative information technologies and computational schemes.

Ref HAL: hal-04720538_v1
DOI: 10.1021/acs.nanolett.4c03300
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Ref HAL: hal-04604964_v1
DOI: 10.1038/s41563-024-01890-4
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Topologically protected spin whirls in ferromagnets are foreseen as the cart-horse of solitonic information technologies. Nevertheless, the future of skyrmionics may rely on antiferromagnets due to their immunity to dipolar fields, straight motion along the driving force and ultrafast dynamics. While complex topological objects were recently discovered in intrinsic antiferromagnets, mastering their nucleation, stabilization and manipulation with energy-efficient means remains an outstanding challenge. Designing topological polar states in magnetoelectric antiferromagnetic multiferroics would allow one to electrically write, detect and erase topological antiferromagnetic entities. Here we stabilize ferroelectric centre states using a radial electric field in multiferroic BiFeO3 thin films. We show that such polar textures contain flux closures of antiferromagnetic spin cycloids, with distinct antiferromagnetic entities at their cores depending on the electric field polarity. By tuning the epitaxial strain, quadrants of canted antiferromagnetic domains can also be electrically designed. These results open the path to reconfigurable topological states in multiferroic antiferromagnets.

Ref HAL: hal-04611919_v1
DOI: 10.1063/5.0208996
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BiFeO$_3$ thin films were epitaxially grown on (110)- and (001)-oriented NdGaO$_3$ single crystal orthorhombic substrates by pulsed laser deposition. The films grown on NdGaO$_3$(110) are fully strained and show two ferroelectric variants that arrange in a stripe domain pattern with 71° domain walls, as revealed by piezoresponse force microscopy. We explored their antiferromagnetic textures using scanning NV magnetometry. Surprisingly given the large compressive strain state, the films still show a spin cycloid, resulting in a periodic zig-zag magnetic pattern due to the two ferroelastic variants. The films grown on NdGaO$_3$(001) are also fully strained, but the (001) orthorhombic substrate imposes a strongly anisotropic in-plane strain. As a consequence, the ferroelectric polarization exhibits a uniaxial in-plane component, parallel to the b-axis of the substrate. The ferroelectric domain pattern consists of 109° charged domain walls between the two selected ferroelastic variants. This anisotropic strain impacts the magnetic state of BiFeO$_3$ and leads to a simpler spin texture defined by a single propagation vector for the spin cycloid. In both cases, electric-field control of ferroelectric domains tends to favor a transition to a canted antiferromagnetic order. These results reveal that the cycloidal structure of BiFeO$_3$ can undergo large compressive strain and open further electrical means to tune the magnetic state of this room-temperature multiferroic compound.

Ref HAL: hal-04600016_v1
Ref Arxiv: 2404.15069
Ref INSPIRE: 2780133
Ref. & Cit.: NASA ADS
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Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.