Ref HAL: hal-04611919_v1
DOI: 10.1063/5.0208996
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Résumé:

BiFeO$_3$ thin films were epitaxially grown on (110)- and (001)-oriented NdGaO$_3$ single crystal orthorhombic substrates by pulsed laser deposition. The films grown on NdGaO$_3$(110) are fully strained and show two ferroelectric variants that arrange in a stripe domain pattern with 71° domain walls, as revealed by piezoresponse force microscopy. We explored their antiferromagnetic textures using scanning NV magnetometry. Surprisingly given the large compressive strain state, the films still show a spin cycloid, resulting in a periodic zig-zag magnetic pattern due to the two ferroelastic variants. The films grown on NdGaO$_3$(001) are also fully strained, but the (001) orthorhombic substrate imposes a strongly anisotropic in-plane strain. As a consequence, the ferroelectric polarization exhibits a uniaxial in-plane component, parallel to the b-axis of the substrate. The ferroelectric domain pattern consists of 109° charged domain walls between the two selected ferroelastic variants. This anisotropic strain impacts the magnetic state of BiFeO$_3$ and leads to a simpler spin texture defined by a single propagation vector for the spin cycloid. In both cases, electric-field control of ferroelectric domains tends to favor a transition to a canted antiferromagnetic order. These results reveal that the cycloidal structure of BiFeO$_3$ can undergo large compressive strain and open further electrical means to tune the magnetic state of this room-temperature multiferroic compound.

Ref HAL: hal-04600016_v1
Ref Arxiv: 2404.15069
Ref INSPIRE: 2780133
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.